This article is cited in 1 paper

PHYSICS

Ellipsometry of the transitive layers semiconductor–dielectric

N. I. Stas’kov^a, I. V. Ivashkevich^a, N. A. Krekoten<sup>b

a</sup> A. A. Kuleshov Mogilev State University, Mogilev
^b Belmicrosystems Reserch & Desing Center Branch of the JSC INTEGRAL, Minsk

Abstract: The polarizability bound of the layer with its optical thickness is established for thin oxide surfaces on a silicon substrate. It is revealed that the structure of the inhomogeneous surface layer can be interpreted by a five-layer model with 11 parameters at the heat treatment of the silicon plates.

Keywords: ellipsometry, optical model, transition layer, rough and optically inhomogeneous layers, polarizability.

UDC: 535.51

Received: 04.04.2013