TECHNICS

Study of the preparation CuO and boron films

Zhu Peng^a, N. N. Fedosenko^b, D. G. Piliptsov^b, R. V. Bekarevich<sup>b

a</sup> Nanjing University of Science and Technology, Nanjing, China
^b F. Skorina Gomel State University, Gomel

Abstract: The use of ion beam source sputtering, CuO and B films were deposited successively. The deposition speeds are 11 nm/min and 11.8 nm/min, respectively. The purity and morphology of the as-prepared films were investigated by power X-ray diffraction and atomic force microscopy. Thus it is can be seen that the sizes of the films were more homogeneous in B than CuO.

Keywords: atomic force microscopy, boron, ion beam source sputtering, hot isostatic pressing, X-ray diffraction.

UDC: 546.26

Received: 10.06.2010

Language: English