Abstract:
The magnetron sputtering process of a vanadium target in an argon and oxygen atmosphere has been investigated.
Hysteresis dependencies of the cathode current change on the oxygen content and sputtering power were obtained.
The temperature coefficient of resistance of the obtained vanadium oxide thin films, with a resistivity up to 0,1 Ohm$\cdot$m, reaches
2,6% / $^\circ$C. The most suitable vanadium oxide films for infrared photodetectors have an amorphous structure with crystalline
phases.
Keywords:magnetron sputtering, cathode current, electrical resistivity, temperature coefficient of resistance, thermistor.
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