This article is cited in 2 papers

All-Russian Scientific Conference "Modern Problems of Optics and Spectroscopy", Troitsk, Moscow, November 28-29, 2018
Spectroscopy of condensed states

Surface polaritons in silicon-doped aluminum and gallium nitride films

N. N. Novikova^a, V. A. Yakovlev^a, S. A. Klimin^a, T. V. Malin^b, A. M. Gilinskii^b, K. S. Zhuravlev<sup>bc

a</sup> Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Novosibirsk State University

Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Keywords: aluminum and gallium nitrides, reflection and ATR spectroscopy, surface polaritons.

Received: 25.02.2018
Revised: 25.02.2018
Accepted: 15.03.2019

DOI: 10.21883/OS.2019.07.47929.84-19

 English version: Optics and Spectroscopy, 2019, 127:1, 36–39

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