This article is cited in 5 papers

Spectroscopy of condensed matter

Optical properties of nonstoichiometric silicon oxide SiO$_{x}$ ($x<$ 2)

V. N. Kruchinin^a, T. V. Perevalov^ab, G. N. Kamaev^a, S. V. Rykhlitskii^a, V. A. Gritsenko<sup>abc

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
^b Novosibirsk State University, 630090, Novosibirsk, Russia
^c Novosibirsk State Technical University, 630073, Novosibirsk, Russia

Abstract: The optical properties of amorphous nonstoichiometric silicon oxide SiO$_{x}$ films of variable composition ($x$ = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiO$_ x$ films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiO$_ x$ structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiO$_{x}$ refractive index and band gap on stoichiometry parameter $x$ are performed.

Keywords: silicon oxide, optical properties, ellipsometry, ab initio modeling.

Received: 08.05.2019
Revised: 08.05.2019
Accepted: 23.07.2019

DOI: 10.21883/OS.2019.11.48513.136-19

 English version: Optics and Spectroscopy, 2019, 127:5, 836–840

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