Optical materials

Development of technology for creating photonic ics with ring microresonators based on Si/SiO$_2$/Si$_3$N$_4$

A. I. Abanin^abc, R. M. Ryazanov^a, A. D. Golikov^de, V. V. Kovalyuk^df, I. O. Venediktov^df, P. P. An^ed, D. A. Shimlovskaya^g, E. P. Kitsyuk^a, S. S. Kosolobov^g, P. I. Lazarenko^c, G. N. Gol'tsman^fh, V. V. Svetukhin<sup>a

a</sup> SPC "Technological Center" MIET
^b Ulyanovsk State University
^c National Research University of Electronic Technology
^d National University of Science and Technology «MISIS», Moscow
^e Moscow State Pedagogical University
^f National Research University Higher School of Economics, Moscow
^g Skolkovo Institute of Science and Technology
^h Russian Quantum Center, Skolkovo, Moscow

Abstract: The development of modern information processing systems is limited by the speed of electronic circuits. The implementation of high-speed information processing of the next generation becomes an extremely difficult task while using a traditional electronic component database. One of the possible solutions to this problem is developing systems based on photonic integrated circuits. In this paper, we present the results of manufacturing high-Q ring resonators based on silicon nitride. Optical devices were manufactured on Si/SiO$_2$/Si$_3$N$_4$ substrates, using fabrication equipment of the SMC “Technological Centre”. In this work, we studied the dependence of optical properties of structures on different deposition methods for silicon nitride, as well as the use of high-temperature annealing. Samples of ring resonators with Q-factor $>$10$^5$ and ring radius of $\approx$ 64 microns are demonstrated.

Keywords: silicon nitride, ring resonator, LPCVD, Q-factor.

Received: 06.06.2025
Revised: 09.09.2025
Accepted: 10.09.2025

DOI: 10.61011/OS.2025.09.61763.8228-25