Nanophotonics

Temperature dependence of luminescence intensity from CdTe/Cd$_{0.6}$Mg$_{0.4}$Te heterostructure under above-barrier excitation

V. F. Agekyan^a, M. È. Labzovskaya^a, A. Yu. Serov^a, N. G. Filosofov^a, G. Karczewski<sup>b

a</sup> Saint Petersburg State University
^b Institute of Physics PAN, Warsaw, Poland

Abstract: The temperature dependence of the luminescence from CdTe/Cd$_{0.6}$Mg$_{0.4}$Te heterostructure in the temperature range of 5–200 K investigated. Established that under below-barrier excitation, this dependence characterized by two nonradiative recombination centers with activation energies of 0.01 eV and 0.037 eV. Under above-barrier excitation, a feature associated with exciton delocalization in the Cd$_{0.6}$Mg$_{0.4}$Te barrier observed in the temperature dependence of the luminescence intensity from CdTe quantum well. Nonradiative recombination in the barrier characterized by two activation energies of 0.0065 eV and 0.046 eV. A model describing the effect of temperature on the luminescence intensity from quantum well and a barrier proposed, which takes into account the delocalization of excitons in the barrier and their capture at nonradiative recombination centers.

Keywords: II–VI semiconductors, heterostructures, quantum wells, luminescence, energy transfer.

Received: 25.04.2025
Revised: 25.04.2025
Accepted: 26.05.2025

DOI: 10.61011/OS.2025.07.61111.7888-25

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