Abstract:
The concentration of hydrogen and N$_3$VH defects in natural diamonds was determined using secondary ion mass spectrometry (SIMS) and infrared (IR) spectroscopy. A method for quantitative analysis of hydrogen was proposed based on the creation of reference samples directly in the studied samples by direct implantation of hydrogen. A linear correlation was established between the IR absorption of the paintwork material at 3107 cm$^{-1}$ and the hydrogen concentration determined by SIMS: $C_H=S^*_{\mathrm{N_3VH}}\times I_{3107}$, كلم $S^*_{\mathrm{N_3VH}}$ = (2,15 $\pm$ 1,44) $\times$10$^{17}$ cm$^{-1}$. A detailed characteristics of all possible hydrogen defects in diamonds is given.
Keywords:secondary ion mass spectrometry, IR spectroscopy, diamond, hydrogen, N$_3$VH defects.