Optics of low-dimensional structures, mesostructures, and metamaterials

X-ray luminescent properties of zinc oxide films on the sapphire M and A-plane

I. D. Venevtsev^a, A. È. Muslimov^b, A. P. Tarasov^b, L. L. Emiraslanova^c, A. M. Ismailov^c, V. M. Kanevskii<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
^b Shubnikov Institute of Crystallography FSRC "Crystallography and Photonics" Russian Academy of Sciences, Moscow, Russia
^c Daghestan State University, Makhachkala, Dagestan Republic, Russia

Abstract: The results of comparative studies of the processes of high-temperature synthesis, luminescence and scintillation characteristics of ZnO films on M(100)- and A(110)-orientation sapphire substrates are presented. It is shown that the use of the magnetron deposition method makes it possible to form, against the background of a continuous film, ensembles of individual [001] ZnO microcrystals with pronounced X-ray luminescent properties. The X-ray luminescence kinetics is characterized by two components: a fast component with a decay time in the order of a nanosecond and a slow luminescence component. The study of the films by photoluminescence spectroscopy revealed the features of the near-band-edge luminescence spectra of the samples, in particular, the presence of various excitonic emission channels. Differences in the spectral parameters of the near-band-edge luminescence band in the case of optical and X-ray excitation are found and interpreted.

Keywords: films, microcrystals, zinc oxide, X-ray luminescence, photoluminescence, excitonic emission.

Received: 20.06.2022
Revised: 19.07.2022
Accepted: 05.09.2022

DOI: 10.21883/OS.2022.11.53780.3845-22

Bibliographic databases:

•