This article is cited in 1 paper

Optical materials

Dependence of photoluminescence on the annealing temperature of polycrystalline ZnO:Te/Si(111) layers

A. K. Omaev, A. M. Bagamadova, M. E. Zobov

Daghestan Institute of Physics after Amirkhanov

Abstract: Polycrystalline ZnO:Te/Si(111) films were obtained by gas-phase epitaxy in hydrogen in a low-pressure flow reactor. The properties of ZnO:Te/Si(111) films were studied using photoluminescence, X-ray diffraction and atomic force microscopy. Photoluminescence measurements have shown that the entire range of the visible part of the spectrum is observed in the emission spectrum of ZnO:Te/Si(111) films. A study of the spectrum of ZnO:Te/Si(111) films at 77 K shows that the luminescence is shifting to the red region. Annealing of films at different temperatures (300–500)$^\circ$C leads to a general decrease in intensity and to a shift of radiation to the long-wavelength region of the spectrum.

Keywords: zinc oxide, luminescence, structure, morphology.

Received: 08.09.2021
Revised: 08.11.2021
Accepted: 08.11.2021

DOI: 10.21883/OS.2022.03.52172.2721-21

 English version: Optics and Spectroscopy, 2022, 130:3, 203–206

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