Optical materials

Physical aspects of changes in light-emitting structures with InGaN/GaN quantum wells during heating and short-term electrical influences

A. M. Ivanov, A. V. Klochkov

Ioffe Institute, St. Petersburg

Abstract: The possibility of improving optical characteristics at the initial stages of aging of nitride quantum-dimensional structures by heating to a temperature not exceeding 84$^\circ$C has been experimentally confirmed. The constructed chamber made it possible to carry out temperature measurements of relative changes in the external quantum efficiency and spectral density of low-frequency noise when heated to 100$^\circ$C. The observed improvements in external quantum efficiency and optical power of UV LEDs occur under milder thermal conditions than in blue LEDs. Explanations of the obtained results are based on changes in the tunnel transport of carriers into quantum wells and the interaction of defects arising in them with indium.

Keywords: external quantum efficiency, hopping tunnel conductivity, low-frequency noise.

Received: 02.11.2024
Revised: 12.02.2024
Accepted: 24.02.2025

DOI: 10.61011/OS.2025.04.60535.7296-24

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