Optical materials

Integrated precision measurement of optical characteristics of serial indium phosphide wafers

L. A. Fedyukhin^a, E. A. Kolosovskii^a, A. V. Gorchakov<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: Precision measurement of optical characteristics of serially produced indium phosphide wafers, including thickness, refractive indices of the substrate and transition layers, absorption of the transition layer, was performed. The measurements were carried out using the method оf invariants at a light wavelength of 1549.14 nm. A detailed analysis of the target function revealed the presence of regular regions of localization of the target function values – pockets. The width of the pockets, the period, the relationship with the parameters determining the number of minima of the angular distributions of the transmission coefficients were determined. Confidence intervals of the measured values of the optical parameters were calculated using indium phosphide as an example.

Keywords: classical optics, interferometry, refractive index, Fabry–Perot interferometer, method of invariants.

Received: 06.06.2024
Revised: 27.10.2024
Accepted: 18.11.2024

DOI: 10.61011/OS.2024.12.59808.6765-24

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