International Conference Physics.SPb/2023 October 23-27, 2023, St. Petersburg
Spectroscopy of condensed state

Estimation of the inhomogeneity of the current density and temperature distribution in the structures of bipolar and heterobipolar high-frequency and ultrahigh-frequency transistors by recombination emission

V. A. Sergeev^a, I. V. Frolov^a, A. A. Kazankov<sup>b

a</sup> Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences, Ulyanovsk, Russia
^b Ulyanovsk State Technical University, Ulyanovsk, Russia

Abstract: The parameters of recombination emission arising in the structures of bipolar transistors in pulsed and stationary operating modes are investigated. The brightness distribution profiles of the recombination emission of the structure, which made it possible to evaluate the inhomogeneity of the current density distribution along the metallization tracks, were obtained when bipolar transistors were turned on in diode mode. Using KT504A transistors as an example, it is shown that the brightness profiles of the recombination emission of the emitter junction in the diode regime are well described by expressions for the distribution of current density along the metallization tracks.

Keywords: bipolar and heterobipolar transistors, recombination emission, current distribution, inhomogeneity.

Received: 11.05.2023
Revised: 19.06.2023
Accepted: 30.10.2023

DOI: 10.61011/OS.2023.11.57001.5050-23

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