I. V. Frolov, V. A. Sergeev, O. A. Radaev, A. A. Kazankov, “Investigation of the relationship between the defects density in light-emitting InGaN/GaN heterostructures and the parameters of the P-I characteristic”, Optics and Spectroscopy, 2024, Volume 132, Issue 11,Pages <nobr>1138

International Physics Conference.St. Petersburg, October 21-25, 2024, St. Petersburg
Optical materials

Investigation of the relationship between the defects density in light-emitting InGaN/GaN heterostructures and the parameters of the P-I characteristic

I. V. Frolov^a, V. A. Sergeev^a, O. A. Radaev^a, A. A. Kazankov^ba

^a Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences, Ulyanovsk, Russia
^b Ulyanovsk State Technical University, Ulyanovsk, Russia

Abstract: The article shows that the parameter of the function that approximates the P-I characteristic of an InGaN/GaN LED in the low current range, which determines the degree of nonlinearity of the P-I characteristic, is inversely proportional to the square root of the defects density. This dependence is confirmed by experimentally established strong correlations between this parameter and the level of low-frequency noise of LEDs and the parameters of heterostructure luminescence inhomogeneity in the microplasma breakdown mode. This parameter can be used to assess the defectness of light-emitting heterostructures.

Keywords: light-emitting heterostructure, defect density, P-I characteristic, low-frequency noise, microplasma breakdown.

Received: 03.05.2024
Revised: 25.07.2024
Accepted: 30.10.2024

DOI: 10.61011/OS.2024.11.59499.6556-24