Abstract:
Femtosecond laser irradiation of amorphous Ge$_2$Sb$_2$Te$_5$ thin films initiates reversible phase transitions. The amorphization and crystallization of Ge$_2$Sb$_2$Te$_5$ thin films were experimentally and theoretically confirmed. Electron and lattice temperatures kinetics during laser pulse duration were evaluated by two-temperature models calculations and experimental data. The dynamical changing of optical properties have been taking into account. Temperatures and cooling rates, which are necessary to initiate phase transitions by IR laser pulses with subpicosecond duration. The observed results open perspectives for improvement of Ge$_2$Sb$_2$Te$_5$ nanophotonical devices.