Abstract:
Thermoelectric Si$_{0.65}$Ge$_{0.35}$Sb$_{\delta}$ materials have been fabricated by spark plasma sintering of Ge-Si-Sb powder mixtures. The electronic properties of Si$_{0.65}$Ge$_{0.35}$Sb$_{\delta}$ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.63 at 490$^{\circ}$C, the latter value is comparable with world-known analogues obtained for Si$_{1-x}$Ge$_{x}$P$_{\delta}$.
Keywords:thermoelectric energy converters, spark plasma sintering, doping, germanium-silicon, thermoelectric figure of merit.
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