PHYSICS

Surface electronic structure of TbIr$_2$Si$_2$ antiferromagnet

D. A. Perminova^a, I. A. Shvets^b, D. Yu. Usachov^b, D. V. Vyalikh^b, S. V. Eremeev<sup>ab

a</sup> Institute of Strength Physics and Materials Science, Russian Academy of Sciences, 634055 Tomsk, Russi
^b St. Petersburg State University, 199034 St. Petersburg, Russia

Abstract: By means of ab initio density functional theory (DFT) calculations, we examined the surface electronic structure of the TbIr$_2$Si$_2$ antiferromagnet, which is distinguished by the out-of-plane alignment of Tb 4$f$ moments and a high Néel temperature. We analyzed the interplay between the spin-orbit and exchange interactions and their effect on the dispersion of surface states resided in the projected band gap around the $\bar{\mathrm{M}}$ point of the surface Brillouin zone, and compared our theoretical findings with low-temperature angle-resolved photoemission spectroscopy (ARPES) measurements.

Keywords: magnetic rare-earth intermetallic materials, surface electronic structure, density functional theory, angle-resolved photoemission spectroscopy.

Received: 02.07.2025
Revised: 20.07.2025
Accepted: 21.07.2025

Language: English

DOI: 10.17586/2220-8054-2025-16-4-467-471

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