Influence of the oxidation of GaAs on the work of light-emitting spintronic diodes with InGaAs/GaAs quantum wells

S. Saeid

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia

Abstract: A study of oxygen atoms' interactions on a GaAs (001) structure surface shows that these atoms are getting adsorbed onto the surface, form an oxide layer, and over time its thickness increases. This oxide layer hinders the injection of electrons and the holes from the metal layer to the semiconductor, thus affecting the photoelectroluminescence and the work of Metal-oxide-semiconductor diodes. These studies also examine the growth rate of oxide layers on the surface of the structure with different deposition degrees (400$^\circ$C, 630$^\circ$C) of cover layers and the extent of the oxygen atoms' penetration into the structure.

Keywords: tunnel effect, spin injector, metal-oxide-semiconductor diodes, oxides of GaAs, storage time, diffusion penetration.

PACS: 72.25.-b, 72.25.Ba, 72.25.Hg, 75.47.-m

Received: 13.10.2015
Revised: 20.10.2015

Language: English

DOI: 10.17586/2220-8054-2015-6-6-875-881

Bibliographic databases:

• 
•