This article is cited in 1 paper

Mathematical model for simulation of indium segregation and mismatch stress in InGaAs/GaAs multiple QWs heterostructures

R. Kh. Akchurin^a, L. B. Berliner^a, A. A. Maldzhy^a, A. A. Marmalyuk<sup>b

a</sup> Lomonosov Moscow State Academy of Fine Chemical Technology (MITHT), Moscow, Russia
^b Sigm Plus Co., Moscow, Russia

Abstract: The mathematical model for prediction of indium concentration profiles and mismatch stress during InGaAs/GaAs QW heterostructures growth by MOCVD has been proposed. Simulation is based on considering of the growth process as a sequence of growth acts each resulted in the formation of imaginary layer by thickness equal to lattice parameter of epilayer. The value of elastic stress and induced shift of thermodynamic equilibrium influencing on epilayer composition revising were calculated for each such layer. Results of calculations determinant possibility of misfit dislocations generation in single and multiple QWs heterostructures are presented.

Received: 27.12.2007