Computer experiment in science and engineering

Numerical investigation of the process of charge carrier transport in a semiconductor phototransformator

M. S. Epifanov, A. V. Shipilin^a, V. N. Shlenskii

^a Computing Centre, USSR Academy of Sciences

Abstract: Numerical analysis of one-dimensional steady-state distribution of charge carriers and an electrical potential in the semiconductor structure $n^+-p-p^+$ subjected to the light excitation is given. Uoltage current characteristics are obtained for different levels of light excitation and various distributions for both the charge and the potential are shown. Nonlinear relation of the power growth which is gathered from phototransformator in dependence of the velocity of light excitation of the charge carries is obtained. An optimum regime of light excitation is determined.

UDC: 621.362+519.63

Received: 27.09.1989

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