Mathematical models and computer experiment

Determination of the nonstationary radiation point defects distribution in crystal in the case of their annihilation on impurity atoms

S. G. Denisenko, A. L. Aseev

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS

Abstract: The influence of annihilation sequence of vacancies $(\nu)$ and interstitial atoms $(i)$ on nonstationary distribution of impurity atoms has beeh analysed. The rate theory continuum model for sink strength of crystal surface for concentrations i and v has been used. The calculation of stiff nonlinear sets of the differential equations describing the kinetics of $i$ and $\nu$ concentrations during irradiation has been made. The comparison of i concentration profile calculated with the experimental data on irradiation of silicon crystal doped with impurity of carbon, oxygen, boron, and phosphorus has been carried out.

UDC: 548.4.001.57+621.039.553+620.187

Received: 02.07.1991
Revised: 25.08.1992

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