This article is cited in 1 paper

Mathematical models and computer experiment

Field emission from silicon

V. A. Fedirko^a, V. A. Nikolaeva<sup>b

a</sup> Moscow State Technological University "Stankin"
^b Institute for Mathematical Modelling, Russian Academy of Sciences

Abstract: Physical and mathematical model for numerical simulation of field emission from silicon is developed taking into account the nonhomogeneous electron heating. Effective discrete scheme and algorithm are realized in the framework of quasi-hydrodynamic approach to solve the problem of electron transport with complex integral non-linear boundary conditions. Field emission cathode characteristics are calculated and discussed in connection with application to analysis of vacuum microelectronics devices.

UDC: 533.539

Received: 05.07.1996

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