This article is cited in 1 paper

Mathematical models and computer experiment

Simulation of impurity diffusion during thermal annealing in the polysilicon-silicon system

O. I. Velichko^a, F. F. Komarov^b, N. M. Lukanov^c, A. N. Muchynski^d, N. L. Prohorenko^e, V. A. Tsurko<sup>d

a</sup> Belarussian State University of Computer Science and Radioelectronic Engineering
^b Belarusian State University
^c Scientific centre "Intersignal"
^d Institute of Mathematics of the National Academy of Sciences of Belarus
^e Institute of Technical Cybernetics, National Academy of Sciences of Belarus

Abstract: A model for the transfer of the impurity atoms in the polysilicon-silicon system is proposed. The model describes impurity segregation phenomena and takes into account nonhomogeneity of distribution of point defects near interface of the phases. Numerical algorithm for quasilinear diffusion equations solving is constructed. Numerical computations for coupled arsenic and boron diffusion are carried out.

UDC: 681.3+519.6

Received: 24.09.1996

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