This article is cited in 1 paper

Mathematical models and computer experiment

Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon

T. A. Kholomina

Ryazan State Radiotechnical Academy

Abstract: Regressional equations shown the implantation regime influence upon value of mobile charge, dielectric constant and electrical resistance of $\mathrm{Si0}_2$ films on silicon are obtained.

Received: 22.01.1998