This article is cited in 5 papers

Communications

1,2,3-Triazolylfullerene-based n-type semiconductor materials for organic field-effect transistors

Z. R. Sadretdinova^a, A. R. Akhmetov^a, R. B. Salikhov^b, I. N. Mullagaliev^b, T. R. Salikhov<sup>b

a</sup> Institute of Petrochemistry and Catalysis, Ufa Federal Research Centre of the Russian Academy of Sciences, Ufa, Russian Federation
^b Ufa University of Science and Technology, Ufa, Russian Federation

Abstract: The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 ± 10% cm² V^–1 s^–1) than that with with biphenyl-4-yl moieties (0.033 ± 10% cm² V^–1 s^–1). The thin film surfaces of triazolylfullerenes with 3-thienyl and 2-naphthyl groups were more uniform and had a lower roughness, which is confirmed by atomic force microscopy studies.

Keywords: organic field-effect transistors, triazolylfullerenes, 1,2,3-triazoles, fullerenes, mobility of charge carriers, surface roughness.

Language: English

DOI: 10.1016/j.mencom.2023.04.007

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