This article is cited in 11 papers

Communications

Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer

A. A. Rezvanova, L. A. Frolova, P. A. Troshin

Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation

Abstract: The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2H-indole-2,3’-[3H]naphth[2,1-b][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed. The memory elements exhibit a switching coefficient of ∼10⁴ and a minimal programming time of 0.5–1.5ms.

Language: English

DOI: 10.1016/j.mencom.2016.01.011

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