This article is cited in 9 papers

Communications

New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

A. R. Tuktarov^a, N. M. Chobanov^a, Z. R. Sadretdinova^a, R. B. Salikhov^b, I. N. Mullagaliev^b, T. R. Salikhov^b, U. M. Dzhemilev<sup>a

a</sup> Institute of Petrochemistry and Catalysis, Ufa Federal Research Centre of the Russian Academy of Sciences, Ufa, Russian Federation
^b Institute of Physics and Technology, Bashkir State University, Ufa, Russian Federation

Abstract: Organic field-effect transistors with styryl fullerene as a semi conductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm² V⁻¹ s⁻¹, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm² V⁻¹ s⁻¹).

Keywords: [60]fullerene, styryl fullerene, PCBM, organic semiconductor, organic field-effect transistor, electron mobility.

Language: English

DOI: 10.1016/j.mencom.2021.09.016

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