This article is cited in 10 papers

Solid-State Electronics

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

N. A. Poklonskii^a, N. I. Gorbachuk^a, S. V. Shpakovski^b, A. Wieck<sup>c

a</sup> Belarusian State University, Minsk
^b "Zavod Tranzistor" Unitary Enterprise, "Integral" Research and Production Corporation, Minsk, 220064, Belarus
^c Ruhr-Universitaet Bochum, D-44780 Bochum, Germany

Abstract: Silicon diodes with a $p^+$–$n$ junction made in a 48-$\mu$m-thick phosphorus-doped silicon epilayer (resistivity $\rho$ = 30 $\Omega$ cm) grown on antimony-doped Si(111) wafers ($\rho$ = 0.01$\Omega$ cm) are studied. The diodes are irradiated by high-energy (3.5 MeV) electrons with fluences from 5 $\cdot$ 10$^{15}$ to 2 $\cdot$ 10$^{16}$ cm$^{-2}$. It is shown that the conventional equivalent circuit of the diode that consists of a parallel $RC$ network and a series-connected resistor inadequately describes the dependence of the dielectric loss $\tan\delta$ on variable current frequency $f$ in the range 1 $\times$ 10$^2$–3 $\times$ 10$^7$ Hz. Another equivalent circuit is suggested that includes not only the capacitance and resistance of the $n$-base (the latter increases because radiation-induced defects are compensated for by shallow donors) but also the $f$ dependence of the capacitance of the space-charge region, which is due to retarded charge exchange between deep-level radiation-induced defects.

Received: 25.02.2010

 English version: Technical Physics, 2010, 55:10, 1463–1471

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