Abstract:
The thickness of the buffer layer of strontium titanate introduced between an La$_{0.67}$Ca$_{0.33}$MnO$_3$ manganite film and a (001)La$_{0.29}$Sr$_{0.71}$Al$_{0.65}$Ta$_{0.35}$O$_3$ substrate is varied ($d_1$ = 7–70 nm) to influence effective misfit m in their lattice parameters. As $m$ increases, electrical resistivity $\rho$ of the film increases sharply and the maximum in the $\rho(T)$ dependence shifts toward low temperatures. At $T<$ 150 K, the temperature dependence of $\rho$ of the manganite film obeys the relationship $\rho=\rho_1+\rho_2T^{4.5}$, where parameter $\rho_1$ is independent of the temperature and magnetic field. Coefficient $\rho_2$ decreases with increasing magnetic field and increases with the misfit between the lattice parameters of the film and substrate, i.e., when the effective hole concentration in the manganite layer decreases.