V. F. Dvoryankin, G. G. Dvoryankina, Yu. M. Ivanov, A. A. Kudryashov, A. G. Petrov, “Photovoltaic X-ray detectors made of CdTe crystals with a $p$–$n$ junction”, Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 80, Issue 7,Pages 156

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Brief Communications

Photovoltaic X-ray detectors made of CdTe crystals with a $p$–$n$ junction

V. F. Dvoryankin^a, G. G. Dvoryankina^a, Yu. M. Ivanov^b, A. A. Kudryashov^a, A. G. Petrov^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: X-ray detectors made of CdTe crystals with a $p$–$n$ junction obtained by diffusion of In into $p$-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to -50 V) and the X-ray effective energy in the range 28–72 keV. It is shown that photovoltaic detectors based on CdTe with $p$–$n$ junctions are superior to Cd$_{0.9}$Zn$_{0.1}$Te ones.

Received: 12.01.2010