Abstract:
It is found that, if the energy being released due to the formation of product molecules in the course of a heterogeneous reaction is lower than the electron work function, the current density of electron chemiemission from the surface of any semiconductor exponentially depends on electric field strength $E$, $j=C\exp(\beta E)$, where $C$ and $\beta$ are coefficients. Theoretical results qualitatively agree with experimental data obtained for the heterogeneous recombination of hydrogen atoms on the silicon surface in weak electric fields ($0<E< 5\times 10^6$ V/m).
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