This article is cited in 1 paper

Brief Communications

On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam

S. I. Kucheev, Yu. S. Tuchina

Belgorod State University

Abstract: Preliminary results of studying the orientation of a 5CB nematic on the single-crystalline silicon surface processed by a 30-keV focused Ga ion beam ar e reported. It is shown that the nematic can be controllably imparted on a homeotropic or inclined orientation depending on the surface irradiation dose. By varying the scanning raster of the ion beam, one can obtain different surface patterns with a micrometer resolution and a desired orientation of the nematic.

Received: 05.08.2009

 English version: Technical Physics, 2010, 55:6, 883–886

Bibliographic databases:

•