A. S. Orekhov, T. S. Kamilov, A. G. Gaibov, K. I. Vakhabov, V. V. Klechkovskaya, “On the growth of higher manganese silicide films on silicon”, Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 80, Issue 6,Pages <nobr>121

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On the growth of higher manganese silicide films on silicon

A. S. Orekhov^a, T. S. Kamilov^b, A. G. Gaibov^b, K. I. Vakhabov^b, V. V. Klechkovskaya^a

^a Institute of Cristallography Russian Academy of Sciences, Moscow
^b Tashkent State Technical University named after A. R. Beruni

Abstract: The growth of manganese silicide films on silicon under the conditions of equilibrium and non-equilibrium diffusion doping of the silicon from the vapor phase is studied for different weight percent of the dopant.

Received: 05.05.2009