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Brief Communications

Binding energy of silicon 2$p$ electrons in iron silicides

M. V. Gomoyunova, I. I. Pronin

Ioffe Institute, St. Petersburg

Abstract: Experimental data for the binding energies of Si 2$p$ electrons in a number of stable and metastable iron silicides are analyzed and generalized. The silicides are applied on the Si(100)2 $\times$ 1 and Si(111)7 $\times$ 7 reconstructed single-crystal faces with solid-phase epitaxy. Core electron spectra are taken by means of high-energy-resolution photoelectron spectroscopy using synchrotron radiation. It is shown that the binding energies of Si 2$p$ electrons in stable silicides, as well as in the silicon-iron solid solution, increase with increasing silicon content in them, since the role of interatomic relaxation in photoelectron excitation events grows feeble.

Received: 29.09.2009

 English version: Technical Physics, 2010, 55:4, 588–590

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