I. L. Shul'pina, R. N. Kyutt, V. V. Ratnikov, I. A. Prokhorov, I. Zh. Bezbach, M. P. Scheglov, “X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals”, Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 80, Issue 4,Pages <nobr>105

This article is cited in 14 papers

Optics, Quantum Electronics

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

I. L. Shul'pina^a, R. N. Kyutt^a, V. V. Ratnikov^a, I. A. Prokhorov^b, I. Zh. Bezbach^b, M. P. Scheglov^a

^a Ioffe Institute, St. Petersburg
^b Scientific Research Center 'Space Materials Science' at A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Kaluga

Abstract: Si(As, P, B) and GaSb(Si) single crystals are used as examples to demonstrate the possibilities of methods of X-ray diffraction for the diagnostics (examination of a real structure) of highly doped semiconductor crystals. Prominence is given to characterizing the state of impurity: whether it is in a solid solution or at a certain stage of its decomposition. An optimum combination of X-ray diffraction methods is found to obtain the most complete information on the microsegregation and structural heterogeneity in crystals with low and high X-ray absorption. This combination is based on X-ray diffraction topography and X-ray diffractometry methods having an increased sensitivity to lattice strains.

Received: 26.02.2009