This article is cited in 3 papers

Solid-State Electronics

Growth of tetragonal CdP$_2$ single crystals and the properties of barriers on their basis

V. Yu. Rud'^a, Yu. V. Rud'^b, I. V. Bondar'<sup>c

a</sup> Saint-Petersburg State Polytechnical University
^b Ioffe Institute, St. Petersburg
^c Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: Large (50 mm long, 20 mm in diameter) CdP$_2$ single crystals with tetragonal symmetry are grown by vapor-phase crystallization for the first time. The unit cell parameters of the single crystals are determined, and it is shown that they have the stoichiometric composition of cadmium diphosphide. Photosensitive In(Cu)/CdP$_2$ structures are fabricated, and their photosensitivity spectra are investigated. It is found that these structures exhibit broadband photosensitivity. The mechanism of photoelectric conversion and the type of interband transitions are discussed. From indirect and direct interband transitions, the bandgap values that are responsible for edge absorption are determined. It is concluded that CdP$_2$ single crystals are feasible for broadband optical converters.

Received: 07.09.2009

 English version: Technical Physics, 2010, 55:4, 517–520

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