V. M. Mukhortov, Yu. I. Golovko, A. A. Mamatov, O. M. Zhigalina, A. N. Kuskova, A. L. Chuvilin, “Effect of internal strain fields on the controllability of nanodimensional ferroelectric films in a plane capacitor”, Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 80, Issue 3,Pages <nobr>77

This article is cited in 2 papers

Solid-State Electronics

Effect of internal strain fields on the controllability of nanodimensional ferroelectric films in a plane capacitor

V. M. Mukhortov^a, Yu. I. Golovko^a, A. A. Mamatov^a, O. M. Zhigalina^b, A. N. Kuskova^b, A. L. Chuvilin^c

^a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
^b Institute of Cristallography Russian Academy of Sciences, Moscow
^c University of Ulm, Germany

Abstract: Nanodimensional ferroelectric heteroepitaxial Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ films grown by the layer-by-layer mechanism on MgO(100) substrates are examined by the X-ray diffraction and transmission electron microscopy methods. It is established that, when the thickness of the film changes, the stress relaxation proceeds via generation of misfit dislocations at the film-substrate interface. There exists a critical thickness ($\approx$ 40 nm) of the film below and above which the film possesses tensile and compression stresses, respectively. Examples of how the stresses influence the insulating properties of the films are given.

Received: 08.07.2009