N. T. Pokladok, I. I. Grigorchak, Ya. M. Buzhuk, “Intercalated structures with a <nobr>$\delta$</nobr> topological zone of alternating semiconductors and magnetoactive nanolayers and behavior of their impedance in magnetic and electric fields”, Zhurnal Tekhnicheskoi Fiziki, 2010, Volume 80, Issue 2,Pages <nobr>77

This article is cited in 2 papers

Solid-State Electronics

Intercalated structures with a $\delta$ topological zone of alternating semiconductors and magnetoactive nanolayers and behavior of their impedance in magnetic and electric fields

N. T. Pokladok^a, I. I. Grigorchak^a, Ya. M. Buzhuk^b

^a Lviv Polytechnic National University
^b Ivan Franko National University of L'viv

Abstract: Hybrid nanostructures with $\delta$-topological configuration based on an InSe layered semiconductor with chromium implanted in the van der Waals gap of its crystalline structure ($\delta$-TNIS) are formed using the laser-stimulated technique. Giant magnetoresistive effect takes place in such structures at room temperature in weak magnetic fields. The structures formed in this way exhibit high magnetophase sensitivity and a high-frequency inductive response controlled by a constant electric field applied at right angles to the nanolayers.

Received: 12.01.2009