This article is cited in 4 papers

Brief Communications

Cascode turn-off of field-controlled integrated thyristors

I. V. Grekhov^a, A. V. Rozhkov^a, L. S. Kostina^a, N. F. Zitta^b, V. I. Matveev^b, D. V. Mashovets<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Svetlana-Semiconductors stock company, St. Petersburg

Abstract: The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today’s power electronics, is considerably higher than that of conventional thyristor-type devices, which is a serious disadvantage of the former. Field-controlled integrated thyristors offering a low residual voltage, as with conventional thyristors, and, at the same time, low turn-on and turn-off power losses in the control circuit, as is the case with insulated-gate bipolar transistors, seem to be promising for high-voltage high-power applications. Turn-off of these devices in the cascode mode with a series-connected low-voltage powerful FET is studied.

Received: 27.04.2009

 English version: Technical Physics, 2010, 55:1, 154–157

Bibliographic databases:

•