This article is cited in 7 papers

Solid-State Electronics

Kinetic model of growth of GaAs nanowires

M. N. Lubov^abc, D. V. Kulikov^ab, Yu. V. Trushin<sup>abc

a</sup> Saint Petersburg Physics and Technology Centre for Research and Education
^b Ioffe Institute, St. Petersburg
^c Academic University of Physics and Technology, Russian Academy of Sciences, St. Petersburg, 194021, Russia

Abstract: A kinetic model of growth and formation of the crystal structure of gallium arsenide nanowires by molecular beam epitaxy on surfaces activated by Au drops is developed. The thicknesses of alternating layers of cubic and hexagonal phases formed due to fluctuations of the solution composition in the drop are calculated and compared with experimental data.

Received: 01.04.2009

 English version: Technical Physics, 2010, 55:1, 85–91

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