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Zhurnal Tekhnicheskoi Fiziki, 2011 Volume 81, Issue 11, Pages 52–57 (Mi jtf9281)

This article is cited in 2 papers

Solids

Spectroscopic ellipsometry study of porous silicon-tin oxide nanocomposite layers

V. V. Bolotov, N. A. Davletkildeev, A. A. Korotenko, V. E. Roslikov, Yu. A. Sten'kin

Omsk Branch, Institute for Semiconductor Physics, Siberian Branch, RAS

Abstract: The layer-by-layer distribution of components in a porous silicon-tin oxide nanocomposite produced by the following three methods is studied by spectroscopic ellipsometry: chemical vapor deposition, atomic layer deposition, and magnetron sputtering. It is shown that, in the nanocomposites fabricated by these methods, SnO$_x$ penetrates to a depth more than 400 nm and is nonuniformly distributed over the porous layer thickness. The nanocomposite prepared by magnetron sputtering followed by heat treatment has the maximum penetration depth and the maximum uniformity of layer-by-layer SnO$_x$ distribution.

Received: 06.10.2010
Accepted: 04.03.2011


 English version:
Technical Physics, 2011, 56:11, 1593–1598

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