D. M. Shukurova, A. S. Orekhov, B. Z. Sharipov, V. V. Klechkovskaya, T. S. Kamilov, “Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Mn$_4$Si$_7$ and Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–M photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 2011, Volume 81, Issue 10,Pages 44

This article is cited in 6 papers

Solid-State Electronics

Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Mn$_4$Si$_7$ and Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–M photodiodes

D. M. Shukurova^a, A. S. Orekhov^b, B. Z. Sharipov^a, V. V. Klechkovskaya^b, T. S. Kamilov^a

^a Tashkent State Technical University named after A. R. Beruni
^b Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: The current-voltage characteristics of Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Mn$_4$Si$_7$ and Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$–M photodiodes are studied experimentally. The current passage mechanism under illumination with $h\nu\ge E_g$ is considered. The role of a contact to Mn$_4$Si$_7$ in the provision of high photosensitivity under illumination of the base by light with $h\nu\ge$ 1.14 eV at low temperatures, 77–220 K, is analyzed. From electrical measurements, electron microscopic data for the Mn$_4$Si$_7$–Si$\langle$Mn$\rangle$ interface, and photocurrent-voltage characteristics, a band diagram under the conditions of photocurrent passage is constructed. The high low-temperature photosensitivity of the diodes $(I_{\mathrm{ph}}/I_{\mathrm{d}}\ge 10^9)$ is explained by the impact-ionization-induced modulation of the base conductivity and injection amplification of holes in the transition layer.

Received: 16.11.2010