This article is cited in 5 papers

Solid-State Electronics

Simulation and investigation of the GaAs and GaSb photovoltaic cell performance

L. S. Lunin, A. S. Pashchenko

Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don

Abstract: The current-voltage and power-voltage characteristics of GaAs and GaSb PVCs under illumination are simulated for different values of the series resistance, temperature, and diode parameter, and the absolute spectral sensitivity of these devices is investigated. It is found that the open-circuit voltage depends mostly on the diode parameter and temperature, whereas the efficiency of the PVC is influenced by the series resistance and diode parameter. It is shown that GaAs and GaSb PVCs can be successfully used in cascade solar cells for conversion of concentrated solar radiation.

Received: 29.09.2010

 English version: Technical Physics, 2011, 56:9, 1291–1296

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