Optics, Quantum Electronics

Interaction of optical radiation with controlled concentration and static dielectric inhomogeneity in narrow-band semiconductors

V. V. Antonov^a, V. A. Kuznetcov<sup>b

a</sup> Yuri Gagarin State Technical University of Saratov
^b Saratov State Agrarian University named after N. I. Vavilov

Abstract: It is shown that a controlled concentration inhomogeneity causing a deviation of a laser beam incident on it can be produced in some semiconductors. In indium antimonide, this effect appears in the case of temperature-electric instability in a magnetic field. In a GaAs-GaP-based compound, this effect occurs due to the inbuilt gradient of static dielectric permittivity and electron flow grouping. These effects make it possible to construct a deflector of infrared radiation.

Received: 12.07.2010

 English version: Technical Physics, 2011, 56:7, 1003–1008

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