This article is cited in 2 papers

Brief Communications

Radiation parameters of thin-film electroluminescent emitters based on ZnSe nanocomposite layers

R. G. Valeev^ab, A. N. Beltyukov^ab, V. M. Vetoshkin^b, È. A. Romanov^b, A. A. Eliseev<sup>c

a</sup> Physical-Technical Institute of the Ural Branch of the Russian Academy of Sciences, Izhevsk
^b Udmurt State University, Izhevsk
^c Lomonosov Moscow State University

Abstract: An approach to fabricating electroluminescence devices is suggested in which an active ZnSe layer in a nanocomposite form (nanocrystallite embedded in an amorphous matrix) is used for the first time. In contrast to standard thin-film electroluminescence devices, no impurity doping of the active layer is required for providing radiation with a given wavelength. The current-voltage characteristic of a developmental device is taken, and the impedance of an electroluminescence capacitor is measured. The electroluminescence spectrum is found to have a maximum at a wavelength of 335 nm.

Received: 15.09.2010

 English version: Technical Physics, 2011, 56:6, 896–898

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