This article is cited in 7 papers

Solid-State Electronics

New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures

A. S. Parshin^ab, S. A. Kushchenkov^a, G. A. Alexandrova^a, S. G. Ovchinnikov<sup>b

a</sup> M. F. Reshetnev Siberian State Aerospace University,
^b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk

Abstract: The feasibility of determining the elemental composition, chemical state, and element distribution across the depth in a subsurface region using the computer simulation of the electron inelastic scattering cross section is demonstrated with iron layers on silicon substrates. Analysis is carried out based on the dielectric theory and on the experimental determination of the product of the electron inelastic mean free path by the inelastic scattering cross section from reflected electron energy loss spectra.

Received: 24.06.2010
Accepted: 13.10.2010

 English version: Technical Physics, 2011, 56:5, 656–661

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