This article is cited in 18 papers

Electron and Ion Beams, Accelerators

Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

Z. A. Isakhanov, Z. È. Мuhtarov, B. E. Umirzakov, M. K. Ruzibaeva

Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Akademgorodok, Tashkent, 100125, Uzbekistan

Abstract: The type, energy, ion dose, and heating temperature required to ensure a stable minimum work function of a surface in one experimental cycle (at least 2–3 min) are determined. Secondary ion mass spectrograms are recorded using Cs$^+$, Ba$^+$, and Ar$^+$ ions. Cu, Al, and Mo samples are studied. The optimum ion implantation conditions and the activation temperature that provide a stable minimum work function of the sample surfaces are found. The samples implanted by Ba$^+$ ions withstand higher temperature and current loads than the samples implanted by Cs$^+$ ions. However, the work function in the case of Cs$^+$ ions decreases stronger (to 1.9 eV). It is shown that neutral sputtered particles do not leave the surface at $e\varphi\le$ 1.85–1.90 eV.

Received: 26.07.2010

 English version: Technical Physics, 2011, 56:4, 546–549

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