RUS  ENG
Full version
JOURNALS // Zhurnal Tekhnicheskoi Fiziki // Archive

Zhurnal Tekhnicheskoi Fiziki, 2011 Volume 81, Issue 2, Pages 141–143 (Mi jtf9060)

This article is cited in 5 papers

Brief Communications

Conductivity of semiconductor diodes with simultaneously applied direct and alternating biases

K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova

Daghestan Institute of Physics after Amirkhanov

Abstract: The influence of a high-amplitude high-frequency signal on the static current-voltage characteristics of commercial semiconductor $p$$n$ junction diodes is studied experimentally. $S$-shaped regions are observed in the direct branches of the current-voltage characteristics over a wide frequency range, and a bell-shaped segment is seen in the reverse branches. The value and position of the latter on the voltage axis considerably depend on the alternating signal frequency.

Received: 27.04.2010
Accepted: 21.07.2010


 English version:
Technical Physics, 2011, 56:2, 298–300

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026