Abstract:
The composition and structure of homogeneous SiC$_{1.4}$, SiC$_{0.95}$, SiC$_{0.7}$, SiC$_{0.4}$, SiC$_{0.12}$, and SiC$_{0.03}$ layers obtained by multiple high-dose implantation of carbon ions with energies of 40, 20, 10, 5, and 3 keV into silicon are analyzed using Auger electron spectroscopy, X-ray diffraction, IR spectroscopy, and atomic force microscopy. The effect of decomposition of carbon and carbon-silicon clusters on the formation of Si–C tetrahedral bonds and on crystallization in silicon layers with high and low concentrations of carbon is considered.
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