S. N. Nagornyh, V. I. Pavlenkov, A. N. Mikhaylov, A. I. Belov, L. V. Krasil’nikova, D. I. Kryzhkov, D. I. Tetelbaum, “Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix”, Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 12,Pages <nobr>63

This article is cited in 3 papers

Solid-State Electronics

Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

S. N. Nagornyh^ab, V. I. Pavlenkov^ac, A. N. Mikhaylov^a, A. I. Belov^a, L. V. Krasil’nikova^ad, D. I. Kryzhkov^d, D. I. Tetelbaum^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Minin State Pedagogical University of Nizhny Novgorod
^c Arzamas State Pedagogical Institute
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: A four-level model of photoluminescence from $\mathrm{Si}$ nanocrystal arrays embedded in a $\mathrm{SiO}_2$ matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-split energy state of an exciton in an excited silicon nanocrystal. An expression is derived for the temperature dependence of the intensity of photoluminescence monochromatic components. A correlation is found between the amount of splitting and the emitted photon energy by comparing model data with our experimental data for ion-synthesized $\mathrm{Si}$ nanocrystals in a $\mathrm{SiO}_2$ matrix. The model explains the finiteness of the photoluminescence intensity at temperatures close to $0$ K and the nonmonotonicity of the temperature run of the intensity.

Received: 31.01.2012